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SIMOPAC(R) Module
BSM 214 A
VDS = 100 V ID = 2 x 125 A R DS(on) = 0.013
q q q q q q
Power module Half-bridge N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 2a
Type BSM 214 A Maximum Ratings Parameter Drain-source voltage
Ordering Code C67076-S1100-A2
Symbol
Values 100 100 20 125 375 - 55 ... + 150 400 0.31 2500 16 11 F 55/150/56
Unit V
VDS VDGR VGS ID ID puls Tj, Tstg Ptot Rth JC Vis
- - - -
Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C Pulsed drain current, TC = 25 C Operating and storage temperature range Power dissipation, TC = 25 C Thermal resistance Chip-case Insulation test voltage2), t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1) 2)
A C W K/W Vac mm -
See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
92
BSM 214 A
Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 50 V, VGS = 0 Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 38 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max., ID = 38 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 50 V, VGS = 10 V ID = 78 A, RGS = 3.3 Turn-off time toff (toff = td (off) + tf) VCC = 50 V, VGS = 10 V ID = 78 A, RGS = 3.3 Values typ. max. Unit
V(BR)DSS
100 - 3.0 - 4.0
V
VGS(th)
2.1
I DSS
- - 50 300 10 0.01 250 1000
A
IGSS
- 100
nA - 0.013
RDS(on)
gfs Ciss Coss Crss td (on) tr td (off) tf
40 - - - - - - -
60 9 4 1.6 50 190 190 50
- 12 6 2.4 - - - -
S nF
ns
Semiconductor Group
93
BSM 214 A
Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse diode Continuous reverse drain current TC = 25 C Pulsed reverse drain current TC = 25 C Diode forward on-voltage IF = 250 A , VGS = 0 Reverse recovery time IF = IS, diF/dt = 100 A/ s, VR = 30 V Reverse recovery charge IF = IS, diF/dt = 100 A/ s, VR = 30 V Values typ. max. Unit
IS
- - - 1.25 320 3.6 125 375
A
ISM
-
VSD
- 1.6
V ns - - C - -
trr Qrr
Semiconductor Group
94
BSM 214 A
Characteristics at Tj = 25 C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 C Typ. output characteristics ID = f (VDS) parameter: tp = 80 s
Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 C Tj 150 C
Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 s , VDS = 25 V
Semiconductor Group
95
BSM 214 A
Typ. on-state resistance RDS(on) = f (ID) parameter: VGS
On-state resistance RDS(on) = f (Tj) parameter: ID = 38 A; VGS = 10 V (spread)
Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = VGS, ID = 1 mA (spread)
Drain current ID = f (TC) parameter: VGS 10 V, Tj = 150 C
Semiconductor Group
96
BSM 214 A
Drain source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 C)
Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz (spread)
Forward characteristics of reverse diode IF = f (VSD) parameter: Tj, tp = 80 s (spread)
Semiconductor Group
97
BSM 214 A
Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T
Typ. gate charge VGS = f (QGate) parameter: IDpuls = 185 A
Semiconductor Group
98

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